IRL40S212ARMA1 vs IPD320N20N3GATMA1 Vergleich
Detaillierter Direktvergleich von IRL40S212ARMA1 von Infineon und IPD320N20N3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD320N20N3GATMA1 - 200V 34A OptiMOS3 N-Channel MOSFET | Infineon
IPD320N20N3GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IRL40S212ARMA1 | IPD320N20N3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,31 | $1,34 |
| Manufacturer | Infineon Technologies | — |
| Part Family | StrongIRFET™ | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 200 V |
| Continuous Drain Current (ID, Tc) | 195 A | 34 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on)) | 1.9 mOhm max | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | — |
| Power Dissipation (PD, Tc) | 231 W | 136 W |
| Betriebstemperaturbereich | [DATA_NEEDED: Tj max] | -55 C to +175 C (Tj) |
| Gehäuse | PG-TO263-3 (D2PAK) | PG-TO252-3 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Technology | StrongIRFET™ (planar N-channel) | OptiMOS 3 |
| RoHS-Status | Compliant | — |
| Lead-Free | Yes | — |
| MSL-Level | 1 (unlimited) | — |
| FET Type | — | N-Channel |
| On-Resistance RDS(on) max | — | 32 mOhm at VGS = 10 V |
| Gate Charge x RDS(on) FOM | — | Excellent (per datasheet) |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| JEDEC Qualification | — | Qualified for target application |
| Channel Mode | — | Enhancement mode |
| Gate Threshold Level | — | Normal level (per datasheet title) |