IRL540NSTRLPBF vs IRFS4321TRLPBF Vergleich
Detaillierter Direktvergleich von IRL540NSTRLPBF von Infineon und IRFS4321TRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRL540NSTRLPBF | IRFS4321TRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,51 | $1,73 |
| FET Type | N-Channel | N-Channel MOSFET, Metal Oxide |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc=25°C | 36 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on)) max @ VGS=10V | 44 mΩ | — |
| On-Resistance (RDS(on)) max @ VGS=5V | [DATA_NEEDED: RDS(on) at VGS=5V] | — |
| Gate-Source Voltage (VGS) max | ±16 V | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level | — |
| Total Gate Charge (Qg) | 49.3 nC | — |
| Power Dissipation (PD) at Tc=25°C | 140 W | — |
| Power Dissipation (PD) at TA=25°C | 3.8 W | — |
| Betriebstemperaturbereich | -55°C to +175°C | — |
| Gehäuse | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Montageart | Surface Mount | Surface Mount |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| RoHS-Status | Compliant (LPBF suffix indicates lead-free) | Compliant |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| Drain-to-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at Tc=25C | — | 85 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| RDS(on) Max at VGS=10V | — | 15 mOhm |
| RDS(on) Max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-to-Source Voltage (VGS) Max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) Typ | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) Typ | — | 71 nC |
| Total Gate Charge (Qg) Max | — | 110 nC |
| Power Dissipation (PD) at Tc=25C | — | 350 W |
| Thermal Resistance Junction-to-Case (RθJC) Max | — | 0.45 C/W |
| Thermal Resistance Junction-to-Case (RθJC) End-of-Life | — | 0.65 C/W (after 1000 cycles -55C to +150C) |
| Betriebs-Sperrschichttemperatur | — | -55C to +175C |
| Technology | — | IR HEXFET (IR MOSFET) |