IRLH5030TRPBF vs BSZ031NE2LS5ATMA1 Vergleich
Detaillierter Direktvergleich von IRLH5030TRPBF von Infineon und BSZ031NE2LS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLH5030TRPBF | BSZ031NE2LS5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,15 | $0,26 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IRLH5030TRPBF | BSZ031NE2LS5ATMA1 |
| FET Type | N-Channel | — |
| Technology | IR MOSFET (HEXFET) | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TA=25C | 13 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| On-Resistance RDS(on) max at VGS=10V | 9 mOhm | — |
| Total Gate Charge (Qg) | 44 nC | — |
| Gate Drive Voltage (optimized) | 10 V (capable of 4.5 V) | — |
| Power Dissipation at TA=25C | 3.6 W | — |
| Power Dissipation at TC=25C | 156 W | — |
| Thermal Resistance to PCB (RthJC) | 0.8 C/W | — |
| Gehäuse | PQFN-8 (SuperSO8 5x6 mm) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Profile Height | ≤ 0.9 mm | — |
| Montageart | Surface Mount | Surface Mount |
| Qualification | JEDEC standard | — |
| Rg Tested | 100% | — |
| RoHS Compliance | Compliant (Lead-free, Bromide-free, Halogen-free) | — |
| Industry-Standard Pinout | Yes | — |
| Technology / Platform | — | OptiMOS 5 25V/30V N-channel trench MOSFET |
| Drain-Source Voltage (VDS) max | — | 25 V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Continuous Drain Current (ID) at Ta=25C | — | 19 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| RDS(on) max @ VGS=10 V | — | 3.1 mOhm |
| RDS(on) typical @ VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Power Dissipation at Ta=25C | — | 2.1 W |
| Power Dissipation at Tc=25C | — | 30 W |
| Betriebs-Sperrschichttemperatur | — | -55 C to +150 C |
| MSL-Level | — | [DATA_NEEDED: MSL] |
| RoHS-Status | — | Compliant |
| Lead-Free | — | Yes |
| Halogenfrei | — | Yes |