IRLH5030TRPBF vs BSZ031NE2LS5ATMA1 对比
详细并排对比 IRLH5030TRPBF 出自 Infineon 和 BSZ031NE2LS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLH5030TRPBF | BSZ031NE2LS5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.15 | $0.26 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IRLH5030TRPBF | BSZ031NE2LS5ATMA1 |
| FET Type | N-Channel | — |
| Technology | IR MOSFET (HEXFET) | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TA=25C | 13 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| On-Resistance RDS(on) max at VGS=10V | 9 mOhm | — |
| Total Gate Charge (Qg) | 44 nC | — |
| Gate Drive Voltage (optimized) | 10 V (capable of 4.5 V) | — |
| Power Dissipation at TA=25C | 3.6 W | — |
| Power Dissipation at TC=25C | 156 W | — |
| Thermal Resistance to PCB (RthJC) | 0.8 C/W | — |
| 封装 | PQFN-8 (SuperSO8 5x6 mm) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Profile Height | ≤ 0.9 mm | — |
| 安装类型 | Surface Mount | Surface Mount |
| Qualification | JEDEC standard | — |
| Rg Tested | 100% | — |
| RoHS Compliance | Compliant (Lead-free, Bromide-free, Halogen-free) | — |
| Industry-Standard Pinout | Yes | — |
| Technology / Platform | — | OptiMOS 5 25V/30V N-channel trench MOSFET |
| Drain-Source Voltage (VDS) max | — | 25 V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Continuous Drain Current (ID) at Ta=25C | — | 19 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| RDS(on) max @ VGS=10 V | — | 3.1 mOhm |
| RDS(on) typical @ VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Power Dissipation at Ta=25C | — | 2.1 W |
| Power Dissipation at Tc=25C | — | 30 W |
| 工作结温 | — | -55 C to +150 C |
| MSL 等级 | — | [DATA_NEEDED: MSL] |
| RoHS 状态 | — | Compliant |
| Lead-Free | — | Yes |
| 无卤 | — | Yes |