IRLL024ZTRPBF vs IRF8734TRPBF Vergleich

Detaillierter Direktvergleich von IRLL024ZTRPBF von Infineon und IRF8734TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRLL024ZTRPBF IRF8734TRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,46 $0,48
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Technology HEXFET Power MOSFET (trench-gate) StrongIRFET™ (HEXFET)
FET Type N-Channel enhancement-mode —
Drain-Source Voltage (VDS) max 55 V —
Gate-Source Voltage (VGS) max ±16 V —
Continuous Drain Current (ID) at TC=25°C 5 A —
Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V 60 mΩ —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) —
Total Gate Charge (Qg) typical 7 nC —
Power Dissipation (PD) at TA=25°C 1 W —
Operating Junction Temperature (TJ) -55 °C to +150 °C —
Gehäuse SOT-223 (TO-261-4) —
Montageart Surface Mount Surface Mount
MSL-Level 1 (unlimited floor life) [DATA_NEEDED: MSL rating per J-STD-020]
RoHS-Status Compliant Compliant (PBF suffix)
Transistortyp — N-Channel MOSFET
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta — 21 A
On-Resistance RDS(on) max at VGS=10V — 3.5 mOhm
Gate Charge (Qg) typ — 20 nC
Power Dissipation (PD) at Ta — 2.5 W
Gehäuse / Bauform — 8-SOIC (SO-8)
Betriebstemperaturbereich — -55C to +150C (junction)
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
Avalanche Energy Rating — Fully characterized avalanche voltage
Lead-Free / Halogen-Free — Lead-free (PBF suffix)
Packaging — Tape & Reel (TR)

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