IRLL024ZTRPBF vs IRF8734TRPBF 비교
다음의 상세 나란히 비교: IRLL024ZTRPBF 제조: Infineon 및 IRF8734TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRLL024ZTRPBF | IRF8734TRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.46 | $0.48 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Technology | HEXFET Power MOSFET (trench-gate) | StrongIRFET™ (HEXFET) |
| FET Type | N-Channel enhancement-mode | — |
| Drain-Source Voltage (VDS) max | 55 V | — |
| Gate-Source Voltage (VGS) max | ±16 V | — |
| Continuous Drain Current (ID) at TC=25°C | 5 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 60 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) | — |
| Total Gate Charge (Qg) typical | 7 nC | — |
| Power Dissipation (PD) at TA=25°C | 1 W | — |
| Operating Junction Temperature (TJ) | -55 °C to +150 °C | — |
| 패키지 | SOT-223 (TO-261-4) | — |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | 1 (unlimited floor life) | [DATA_NEEDED: MSL rating per J-STD-020] |
| RoHS 상태 | Compliant | Compliant (PBF suffix) |
| 트랜지스터 유형 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 21 A |
| On-Resistance RDS(on) max at VGS=10V | — | 3.5 mOhm |
| Gate Charge (Qg) typ | — | 20 nC |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| 패키지 / 케이스 | — | 8-SOIC (SO-8) |
| 동작 온도 범위 | — | -55C to +150C (junction) |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Avalanche Energy Rating | — | Fully characterized avalanche voltage |
| Lead-Free / Halogen-Free | — | Lead-free (PBF suffix) |
| Packaging | — | Tape & Reel (TR) |