IRLML0030TRPBF vs IRLML2030TRPBF Vergleich
Detaillierter Direktvergleich von IRLML0030TRPBF von Infineon und IRLML2030TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLML0030TRPBF | IRLML2030TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,13 | $0,14 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 5.3 A | — |
| Drain-Source On-Resistance (RDS(on)) max | 27 mOhm at VGS=4.5V | — |
| Gate-Source Threshold Voltage (VGS(th)) | Logic-level (5 V optimized) | — |
| Total Gate Charge (Qg) | 3.6 nC typical | — |
| Power Dissipation (PD) at TA=25C | 1.3 W | — |
| Betriebstemperaturbereich | -55C to +150C | — |
| Gehäuse | Micro3 / SOT-23 (3-pin) | Micro3 (SOT-23) |
| Montageart | Surface Mount | Surface Mount |
| Technology | IR HEXFET Power MOSFET | HEXFET (IR MOSFET) |
| MSL-Level | 1 (unlimited floor life per JEDEC J-STD-020) | MSL 1 |
| Soldering | Wave-solder capable | Wave-solder compatible |
| Qualification | JEDEC standard | JEDEC standard |
| RoHS-Status | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRLML2030TRPBF |
| Continuous Drain Current (ID) at Ta | — | 2.7 A |
| Power Dissipation (PD) at Ta | — | 1.3 W |
| On-Resistance RDS(on) max @ VGS=10V | — | 100 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | 154 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Charge (Qg) typ | — | 1.0 nC |
| Betriebstemperatur | — | -55C to +150C (junction) |
| RoHS Compliance | — | Yes (lead-free, halogen-free) |