IRLML0030TRPBF vs IRLML2030TRPBF 对比

详细并排对比 IRLML0030TRPBF 出自 Infineon 和 IRLML2030TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRLML0030TRPBF IRLML0030TRPBF - 30V N-Channel HEXFET MOSFET | Infineon

IRLML0030TRPBF - 30V N-Channel HEXFET MOSFET | Infineon

IRLML0030TRPBF ✓ 量产中
Infineon
IRLML2030TRPBF IRLML2030TRPBF - 30V N-Ch HEXFET MOSFET, 2.7A | Infineon

IRLML2030TRPBF - 30V N-Ch HEXFET MOSFET, 2.7A | Infineon

IRLML2030TRPBF ✓ 量产中

规格对比

参数 IRLML0030TRPBF IRLML2030TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.13 $0.14
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25C 5.3 A —
Drain-Source On-Resistance (RDS(on)) max 27 mOhm at VGS=4.5V —
Gate-Source Threshold Voltage (VGS(th)) Logic-level (5 V optimized) —
Total Gate Charge (Qg) 3.6 nC typical —
Power Dissipation (PD) at TA=25C 1.3 W —
工作温度范围 -55C to +150C —
封装 Micro3 / SOT-23 (3-pin) Micro3 (SOT-23)
安装类型 Surface Mount Surface Mount
Technology IR HEXFET Power MOSFET HEXFET (IR MOSFET)
MSL 等级 1 (unlimited floor life per JEDEC J-STD-020) MSL 1
Soldering Wave-solder capable Wave-solder compatible
Qualification JEDEC standard JEDEC standard
RoHS 状态 Compliant —
Manufacturer — Infineon Technologies
Part Number — IRLML2030TRPBF
Continuous Drain Current (ID) at Ta — 2.7 A
Power Dissipation (PD) at Ta — 1.3 W
On-Resistance RDS(on) max @ VGS=10V — 100 mOhm
On-Resistance RDS(on) max @ VGS=4.5V — 154 mOhm
Gate-Source Voltage (VGS) max — +/-20 V
Gate Charge (Qg) typ — 1.0 nC
工作温度 — -55C to +150C (junction)
RoHS Compliance — Yes (lead-free, halogen-free)

数据手册与资源

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