IRLML6346TRPBF vs IRLML5103TRPBF Vergleich
Detaillierter Direktvergleich von IRLML6346TRPBF von Infineon und IRLML5103TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLML6346TRPBF | IRLML5103TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,18 | $0,05 |
| Polarity | N-Channel | P-Channel |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) | 3.4 A (TA=25C) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) max @ VGS=2.5V | 63 mOhm | — |
| RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Drive Capability | 2.5V logic-level | — |
| Maximum Power Dissipation (PD) | 1.3 W (TA=25C, 1in2 FR4) | — |
| Betriebs-Sperrschichttemperatur | -55C to +150C | — |
| Gehäuse | Micro3 / SOT-23 | Micro3/SOT-23 |
| Montageart | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET | IR MOSFET |
| MSL-Level | 1 | — |
| Lead-Free Finish | Yes (PBF suffix) | — |
| RoHS-Status | Compliant | Compliant |
| Transistortyp | — | P-Channel MOSFET |
| Maximum Drain-Source Voltage | — | 30 V |
| Continuous Drain Current | — | 760 mA at Ta |
| Power Dissipation | — | 540 mW at Ta |
| Maximum On-Resistance | — | 600 mOhm |
| Gate Charge | — | 3.4 nC |
| Drain-Source Voltage Rating | — | -30 V |
| Channel Mode | — | Enhancement |
| Betriebstemperatur | — | 175 C |
| Footprint | — | SOT-23 |