IRLR2905TRPBF vs IRF640NPBF Vergleich
Detaillierter Direktvergleich von IRLR2905TRPBF von Infineon und IRF640NPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLR2905TRPBF | IRF640NPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,61 | $0,88 |
| FET Type | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET, fifth generation) | HEXFET (5th Generation) |
| Drain-to-Source Voltage (VDS) | 55 V | 200 V |
| Continuous Drain Current (ID) at Tc=25C | 42 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | 27 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Gate Charge (Qg) | 32 nC | — |
| Power Dissipation (PD) at Tc=25C | 110 W | 150 W |
| Betriebs-Sperrschichttemperatur | -55C to +175C | -55C to +150C |
| Gehäuse | TO-252AA (DPAK), surface mount | TO-220AB (through-hole, 3-pin) |
| Montageart | Surface Mount | Through Hole |
| Avalanche Rated | Yes | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| Gate Drive | Logic-level compatible | — |
| Continuous Drain Current (ID) at Tc | — | 18 A |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 150 mOhm max at VGS = 10 V |
| Total Gate Charge (Qg) | — | 44.7 nC |
| Transistortyp | — | N-Channel Enhancement Mode |
| Avalanche Energy Rated | — | Yes |
| dv/dt Rating | — | Dynamic, rated |
| RoHS-Status | — | Compliant |
| Lead-Free | — | Yes (PBF suffix) |
| Manufacturer | — | Infineon (formerly International Rectifier) |