IRLR3636TRLPBF vs IRLR2905TRPBF Vergleich
Detaillierter Direktvergleich von IRLR3636TRLPBF von Infineon und IRLR2905TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLR3636TRLPBF | IRLR2905TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,74 | $0,61 |
| FET Type | N-Channel MOSFET | N-Channel MOSFET |
| Technology | IR HEXFET® (IR MOSFET™) | HEXFET (IR MOSFET, fifth generation) |
| Drain-to-Source Voltage (VDS) | 60 V | 55 V |
| Continuous Drain Current (ID, TC=25°C) | 50 A | — |
| Continuous Drain Current (ID, TC=100°C) | 32 A [DATA_NEEDED: exact TC=100°C ID rating] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM rating] | [DATA_NEEDED: pulsed drain current value] |
| RDS(on) Max @ VGS=10V | 6.8 mΩ | — |
| Gate-to-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic-level) | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (QG) | 33 nC | — |
| Power Dissipation (PD, TC=25°C) | 143 W | — |
| Betriebstemperaturbereich | -55 °C to +175 °C (TJ) | — |
| Gehäuse | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| Montageart | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix) | Yes / Compliant |
| Avalanche Rated | Yes (per Infineon datasheet family) | Yes |
| Continuous Drain Current (ID) at Tc=25C | — | 42 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 27 mOhm |
| Gate Charge (Qg) | — | 32 nC |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| Betriebs-Sperrschichttemperatur | — | -55C to +175C |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |
| Gate Drive | — | Logic-level compatible |