IRLR8726TRPBF vs IRLR8726TRLPBF Vergleich
Detaillierter Direktvergleich von IRLR8726TRPBF von Infineon und IRLR8726TRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLR8726TRPBF | IRLR8726TRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,32 | $0,36 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRLR8726TRPBF | — |
| Technology | StrongIRFET™ (HEXFET) | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 30 V | — |
| Continuous Drain Current (I_D) at T_C | 86 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance R_DS(on) max | 5.8 mΩ at V_GS = 10 V | — |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: V_GS(th) min/max] | — |
| Gate Charge Q_g (typ.) | 15 nC | — |
| Power Dissipation P_D | 75 W at T_C | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | -55C to +175C |
| Gehäuse | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Anzahl der Pins | 3 (Gate, Drain, Source) | — |
| RoHS-Status | Compliant | — |
| Halogenfrei | Yes | — |
| MSL-Level | 1 | 1 (per JEDEC J-STD-020, inferred from PBF suffix and DPAK packaging) |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at TC=25C | — | 86 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Max at VGS=10V | — | 5.8 mOhm |
| On-Resistance RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | — | 15 nC |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Maximum Power Dissipation (PD) at TC=25C | — | 75 W |
| Technology Family | — | StrongIRFET |
| RoHS Compliance | — | ROHS3 Compliant |
| Lead-Free | — | Yes (PBF suffix) |