IRLR8726TRPBF vs IRLR8726TRLPBF Comparação
Comparação detalhada lado a lado de IRLR8726TRPBF por Infineon e IRLR8726TRLPBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IRLR8726TRPBF | IRLR8726TRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,32 | $0,36 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRLR8726TRPBF | — |
| Technology | StrongIRFET™ (HEXFET) | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 30 V | — |
| Continuous Drain Current (I_D) at T_C | 86 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance R_DS(on) max | 5.8 mΩ at V_GS = 10 V | — |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: V_GS(th) min/max] | — |
| Gate Charge Q_g (typ.) | 15 nC | — |
| Power Dissipation P_D | 75 W at T_C | — |
| Temperatura de junção de operação | -55C to +175C | -55C to +175C |
| Encapsulamento | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Número de pinos | 3 (Gate, Drain, Source) | — |
| Status RoHS | Compliant | — |
| Livre de halogênio | Yes | — |
| Nível MSL | 1 | 1 (per JEDEC J-STD-020, inferred from PBF suffix and DPAK packaging) |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at TC=25C | — | 86 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Max at VGS=10V | — | 5.8 mOhm |
| On-Resistance RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | — | 15 nC |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Maximum Power Dissipation (PD) at TC=25C | — | 75 W |
| Technology Family | — | StrongIRFET |
| RoHS Compliance | — | ROHS3 Compliant |
| Lead-Free | — | Yes (PBF suffix) |