IRLZ34NPBF vs IRFZ44NSTRLPBF Vergleich
Detaillierter Direktvergleich von IRLZ34NPBF von Infineon und IRFZ44NSTRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLZ34NPBF | IRFZ44NSTRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,65 | $0,93 |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| Part Number Suffix | PBF = Lead-free (Pb-free), Tube packaging | — |
| Transistortyp | N-Channel HEXFET Power MOSFET | — |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc=25 C | 30 A | — |
| Continuous Drain Current (ID) at Tc=100 C | [DATA_NEEDED: ID at Tc=100 C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance Rds(on) max @ VGS=10 V | 35 mOhm | — |
| On-Resistance Rds(on) max @ VGS=5 V | [DATA_NEEDED: Rds(on) at VGS=5 V] | — |
| Gate Threshold Voltage VGS(th) | 1.0 V to 2.0 V (logic-level) | — |
| Total Gate Charge (Qg) | 16.7 nC (typical) | 42 nC |
| Power Dissipation (PD) at Tc=25 C | 68 W | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | — |
| Gehäuse | TO-220AB (through-hole, 3 leads + tab) | D2PAK (TO-263) |
| Montageart | Through Hole | Surface Mount |
| RoHS-Status | Compliant (Pb-free PBF suffix) | Compliant |
| MSL-Level | Not applicable (through-hole) | — |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC | — | 49 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Drain-Source On-Resistance RDS(on) max | — | 17.5 mOhm at VGS=10V |
| Power Dissipation (TC) | — | 94 W |
| Power Dissipation (TA) | — | 3.8 W |
| Betriebstemperaturbereich | — | -55C to +175C |
| Technology | — | HEXFET |
| Lead-Free (PBF suffix) | — | Yes |