IRLZ34NPBF vs IRFZ44NSTRLPBF 비교
다음의 상세 나란히 비교: IRLZ34NPBF 제조: Infineon 및 IRFZ44NSTRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRLZ34NPBF | IRFZ44NSTRLPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.65 | $0.93 |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| Part Number Suffix | PBF = Lead-free (Pb-free), Tube packaging | — |
| 트랜지스터 유형 | N-Channel HEXFET Power MOSFET | — |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc=25 C | 30 A | — |
| Continuous Drain Current (ID) at Tc=100 C | [DATA_NEEDED: ID at Tc=100 C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance Rds(on) max @ VGS=10 V | 35 mOhm | — |
| On-Resistance Rds(on) max @ VGS=5 V | [DATA_NEEDED: Rds(on) at VGS=5 V] | — |
| Gate Threshold Voltage VGS(th) | 1.0 V to 2.0 V (logic-level) | — |
| Total Gate Charge (Qg) | 16.7 nC (typical) | 42 nC |
| Power Dissipation (PD) at Tc=25 C | 68 W | — |
| 동작 접합 온도 | -55 C to +175 C | — |
| 패키지 | TO-220AB (through-hole, 3 leads + tab) | D2PAK (TO-263) |
| 실장 유형 | Through Hole | Surface Mount |
| RoHS 상태 | Compliant (Pb-free PBF suffix) | Compliant |
| MSL 레벨 | Not applicable (through-hole) | — |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC | — | 49 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Drain-Source On-Resistance RDS(on) max | — | 17.5 mOhm at VGS=10V |
| Power Dissipation (TC) | — | 94 W |
| Power Dissipation (TA) | — | 3.8 W |
| 동작 온도 범위 | — | -55C to +175C |
| Technology | — | HEXFET |
| Lead-Free (PBF suffix) | — | Yes |