IRLZ34NPBF vs IRLZ44NPBF Vergleich
Detaillierter Direktvergleich von IRLZ34NPBF von Infineon und IRLZ44NPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLZ34NPBF | IRLZ44NPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,65 | $0,68 |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| Part Number Suffix | PBF = Lead-free (Pb-free), Tube packaging | — |
| Transistortyp | N-Channel HEXFET Power MOSFET | — |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) at Tc=25 C | 30 A | — |
| Continuous Drain Current (ID) at Tc=100 C | [DATA_NEEDED: ID at Tc=100 C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 160 A |
| On-Resistance Rds(on) max @ VGS=10 V | 35 mOhm | — |
| On-Resistance Rds(on) max @ VGS=5 V | [DATA_NEEDED: Rds(on) at VGS=5 V] | — |
| Gate Threshold Voltage VGS(th) | 1.0 V to 2.0 V (logic-level) | — |
| Total Gate Charge (Qg) | 16.7 nC (typical) | 32 nC |
| Power Dissipation (PD) at Tc=25 C | 68 W | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | -55 °C to +175 °C |
| Gehäuse | TO-220AB (through-hole, 3 leads + tab) | TO-220AB (through-hole, 3 leads) |
| Montageart | Through Hole | Through Hole |
| RoHS-Status | Compliant (Pb-free PBF suffix) | Compliant |
| MSL-Level | Not applicable (through-hole) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25°C | — | 47 A |
| Gate-to-Source Voltage (VGS) Max | — | ±16 V |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.0 V (typ 1.5 V) |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 22 mΩ max at VGS=5V, ID=25A |
| Power Dissipation (PD) at TC=25°C | — | 110 W |
| Power Dissipation (PD) at TA=25°C | — | 3.8 W |
| Thermal Resistance Junction-to-Case (RθJC) | — | 1.4 °C/W |
| Technology | — | HEXFET (advanced process) |
| Logic-Level Gate Drive | — | Yes (fully enhanced at VGS=5V) |