IRLZ34NPBF vs IRLZ44NPBF Comparaison
Comparaison détaillée côte à côte de IRLZ34NPBF par Infineon et IRLZ44NPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRLZ34NPBF | IRLZ44NPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,65 | $0,68 |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| Part Number Suffix | PBF = Lead-free (Pb-free), Tube packaging | — |
| Type de transistor | N-Channel HEXFET Power MOSFET | — |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) at Tc=25 C | 30 A | — |
| Continuous Drain Current (ID) at Tc=100 C | [DATA_NEEDED: ID at Tc=100 C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 160 A |
| On-Resistance Rds(on) max @ VGS=10 V | 35 mOhm | — |
| On-Resistance Rds(on) max @ VGS=5 V | [DATA_NEEDED: Rds(on) at VGS=5 V] | — |
| Gate Threshold Voltage VGS(th) | 1.0 V to 2.0 V (logic-level) | — |
| Total Gate Charge (Qg) | 16.7 nC (typical) | 32 nC |
| Power Dissipation (PD) at Tc=25 C | 68 W | — |
| Température de jonction en fonctionnement | -55 C to +175 C | -55 °C to +175 °C |
| Boîtier | TO-220AB (through-hole, 3 leads + tab) | TO-220AB (through-hole, 3 leads) |
| Type de montage | Through Hole | Through Hole |
| Statut RoHS | Compliant (Pb-free PBF suffix) | Compliant |
| Niveau MSL | Not applicable (through-hole) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25°C | — | 47 A |
| Gate-to-Source Voltage (VGS) Max | — | ±16 V |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.0 V (typ 1.5 V) |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 22 mΩ max at VGS=5V, ID=25A |
| Power Dissipation (PD) at TC=25°C | — | 110 W |
| Power Dissipation (PD) at TA=25°C | — | 3.8 W |
| Thermal Resistance Junction-to-Case (RθJC) | — | 1.4 °C/W |
| Technology | — | HEXFET (advanced process) |
| Logic-Level Gate Drive | — | Yes (fully enhanced at VGS=5V) |