IRS2011STRPBF vs IR2114SSTRPBF Vergleich

Detaillierter Direktvergleich von IRS2011STRPBF von Infineon und IR2114SSTRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRS2011STRPBF IR2114SSTRPBF
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,55 $1,84
Funktion Half-Bridge Gate Driver —
Configuration High-Side and Low-Side, Independent Channels Half-Bridge
Anzahl der Ausgänge 2 —
Maximum Offset Voltage (High-Side) 200 V —
Output Current (Source / Sink) 1 A typical / 1 A typical —
Propagation Delay (ton/toff) 60 ns typical —
Delay Matching 20 ns maximum —
Logic Input Compatibility 3.3 V CMOS / LSTTL —
Bootstrap Supply Integrated bootstrap diode, floating channel —
Supply Voltage (VCC) 10 V to 20 V 11.5 V to 20 V
Negative Transient Tolerance Yes, dV/dt immune —
Gehäuse 8-SOIC (DSO-8) —
Betriebstemperatur -40 C to +125 C -40 C to +125 C
Montageart Surface Mount Surface Mount
RoHS-Status Compliant (PBF suffix) Compliant
Suitable Drivers MOSFETs and IGBTs —
Driver Type — High-side and Low-side Gate Driver
Number of Drivers — 2
Input Type — Non-Inverting
Floating Channel Voltage — 600 V (max)
Peak Source Current — 2 A (typical)
Peak Sink Current — 3 A (typical)
Propagation Delay — 440 ns (typical)
Rise Time (typ) — [DATA_NEEDED: rise time]
Fall Time (typ) — [DATA_NEEDED: fall time]
Gehäuse / Bauform — 24-SSOP (0.209, 5.30 mm Width)
Packaging — Tape & Reel (TR)
MSL-Level — [DATA_NEEDED: MSL level]
Lead-Free — Yes (PBF suffix indicates Pb-free)
Protection Features — DESAT short-circuit detection, soft over-current shutdown
FAULT/SD Logic — 3.3 V-compatible CMOS, bidirectional

Datenblätter & Ressourcen

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