IRS2011STRPBF vs IR2114SSTRPBF 对比

详细并排对比 IRS2011STRPBF 出自 Infineon 和 IR2114SSTRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRS2011STRPBF IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF ✓ 量产中

规格对比

参数 IRS2011STRPBF IR2114SSTRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.55 $1.84
功能 Half-Bridge Gate Driver —
Configuration High-Side and Low-Side, Independent Channels Half-Bridge
输出数量 2 —
Maximum Offset Voltage (High-Side) 200 V —
Output Current (Source / Sink) 1 A typical / 1 A typical —
Propagation Delay (ton/toff) 60 ns typical —
Delay Matching 20 ns maximum —
Logic Input Compatibility 3.3 V CMOS / LSTTL —
Bootstrap Supply Integrated bootstrap diode, floating channel —
Supply Voltage (VCC) 10 V to 20 V 11.5 V to 20 V
Negative Transient Tolerance Yes, dV/dt immune —
封装 8-SOIC (DSO-8) —
工作温度 -40 C to +125 C -40 C to +125 C
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant (PBF suffix) Compliant
Suitable Drivers MOSFETs and IGBTs —
Driver Type — High-side and Low-side Gate Driver
Number of Drivers — 2
Input Type — Non-Inverting
Floating Channel Voltage — 600 V (max)
Peak Source Current — 2 A (typical)
Peak Sink Current — 3 A (typical)
Propagation Delay — 440 ns (typical)
Rise Time (typ) — [DATA_NEEDED: rise time]
Fall Time (typ) — [DATA_NEEDED: fall time]
封装 / 外壳 — 24-SSOP (0.209, 5.30 mm Width)
Packaging — Tape & Reel (TR)
MSL 等级 — [DATA_NEEDED: MSL level]
Lead-Free — Yes (PBF suffix indicates Pb-free)
Protection Features — DESAT short-circuit detection, soft over-current shutdown
FAULT/SD Logic — 3.3 V-compatible CMOS, bidirectional

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