ISC009N03LF2SATMA1 vs ISZ033N03LF2SATMA1 Vergleich
Detaillierter Direktvergleich von ISC009N03LF2SATMA1 von Infineon und ISZ033N03LF2SATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC009N03LF2SATMA1 | ISZ033N03LF2SATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,48 | $0,68 |
| Transistortyp | N-Channel MOSFET | — |
| Technology | OptiMOS™ trench | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Ta | 43 A | — |
| Continuous Drain Current (ID) at Tc | 341 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 188 W | — |
| On-Resistance RDS(on) max | 0.9 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V (typ) | 2.35 V max @ 30 uA |
| Gehäuse | PG-TDSON-8-62 (SuperSO8 5x6) | PG-TSDSON-8 FL (8-pin) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 °C to +175 °C (junction, [DATA_NEEDED: exact operating range from datasheet]) | — |
| Gate Drive Voltage (VGS) | 10 V (typical for rated RDS(on)) | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| RoHS-Status | Compliant | Compliant |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 20 A |
| Continuous Drain Current (ID) at TC=25C | — | 109 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TA=25C | — | 3 W |
| Power Dissipation (PD) at TC=25C | — | 71 W |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at 10V VGS] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ] |
| Betriebs-Sperrschichttemperatur | — | -55 C to +175 C |