ISC009N03LF2SATMA1 vs ISZ033N03LF2SATMA1 Comparison
Detailed side-by-side comparison of ISC009N03LF2SATMA1 by Infineon and ISZ033N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC009N03LF2SATMA1 - 30V 341A 0.9mΩ N-Channel MOSFET | Infineon
ISC009N03LF2SATMA1 ✓ Active
Specification Comparison
| Parameter | ISC009N03LF2SATMA1 | ISZ033N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Transistor Type | N-Channel MOSFET | — |
| Technology | OptiMOS™ trench | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Ta | 43 A | — |
| Continuous Drain Current (ID) at Tc | 341 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 188 W | — |
| On-Resistance RDS(on) max | 0.9 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V (typ) | 2.35 V max @ 30 uA |
| Package | PG-TDSON-8-62 (SuperSO8 5x6) | PG-TSDSON-8 FL (8-pin) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 °C to +175 °C (junction, [DATA_NEEDED: exact operating range from datasheet]) | — |
| Gate Drive Voltage (VGS) | 10 V (typical for rated RDS(on)) | — |
| MSL Level | [DATA_NEEDED: MSL rating] | — |
| RoHS Status | Compliant | Compliant |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 20 A |
| Continuous Drain Current (ID) at TC=25C | — | 109 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TA=25C | — | 3 W |
| Power Dissipation (PD) at TC=25C | — | 71 W |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at 10V VGS] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ] |
| Operating Junction Temperature | — | -55 C to +175 C |