ISC011N03L5SATMA1 vs IQDH35N03LM5CGATMA1 Vergleich
Detaillierter Direktvergleich von ISC011N03L5SATMA1 von Infineon und IQDH35N03LM5CGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQDH35N03LM5CGATMA1 - 30V 700A 0.35mΩ N-Channel MOSFET | Infineon
IQDH35N03LM5CGATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | ISC011N03L5SATMA1 | IQDH35N03LM5CGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,47 | $1,45 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 / StrongIRFET 30 V | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) @ Ta=25C | 37 A | — |
| Continuous Drain Current (ID) @ Tc=25C | 100 A | — |
| Power Dissipation (PD) @ Ta=25C | 2.5 W | — |
| Power Dissipation (PD) @ Tc=25C | 96 W | — |
| Gehäuse | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) | PG-TTFN-9-U02 (PQFN 5x6 mm²) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55 C to +175 C (TJ) | — |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 5 trench MOSFET |
| Gate Drive | Logic-level compatible | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 66 A |
| Pulsed Drain Current (IDM) at Tc | — | 700 A |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 0.35 mΩ (typical at VGS=10 V) |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 278 W |
| Betriebstemperaturbereich | — | -55 °C to +175 °C |
| Halogenfrei | — | Yes |
| Channel Type | — | N-Channel |