ISC011N06LM5ATMA1 vs IPT067N20NM6ATMA1 Vergleich

Detaillierter Direktvergleich von ISC011N06LM5ATMA1 von Infineon und IPT067N20NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter ISC011N06LM5ATMA1 IPT067N20NM6ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,74 $4,85
Manufacturer Infineon Technologies Infineon Technologies
Part Number ISC011N06LM5ATMA1 —
Technology OptiMOS 5 Trench-gate OptiMOS 6 silicon
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 60 V 200 V
Continuous Drain Current (ID) at Ta 37 A —
Continuous Drain Current (ID) at Tc 288 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 188 W —
RDS(on) max at VGS=10V 1.15 mOhm —
Gehäuse PG-TDSON-8-17 (SuperSO8 5x6 mm) PG-HSOF-8-1 (8-pin + exposed tab)
Montageart Surface Mount Surface Mount
Pin-Anzahl 8 —
Betriebstemperaturbereich -55C to +175C -55C to +150C (junction)
RoHS-Status Compliant Compliant
MSL-Level [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL moisture sensitivity level]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Product Family — OptiMOS 6
Transistortyp — N-Channel MOSFET
Continuous Drain Current (ID) at TA=25C — 15.3 A
Continuous Drain Current (ID) at TC=25C — 137 A
Power Dissipation (PD) at TA=25C — 3.8 W
Power Dissipation (PD) at TC=25C — 300 W
Gate-Source Voltage (VGS) — [DATA_NEEDED: max VGS rating]
On-Resistance RDS(on) typ — [DATA_NEEDED: RDS(on) at VGS=10V]
Gate Charge (Qg) typ — [DATA_NEEDED: total gate charge]
Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical value]
Lead-Free — Yes
Configuration — Single N-channel

Datenblätter & Ressourcen

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