ISC015N06NM5ATMA1 vs BSC014NE2LSIATMA1 Vergleich
Detaillierter Direktvergleich von ISC015N06NM5ATMA1 von Infineon und BSC014NE2LSIATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC015N06NM5ATMA1 | BSC014NE2LSIATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,62 | $0,48 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TA=25C | 33 A | — |
| Pulsed Drain Current (IDM) at TC=25C | 259 A | — |
| On-Resistance RDS(on) typical at VGS=10V | 1.5 mOhm | — |
| Total Power Dissipation (TA) | 3 W | — |
| Total Power Dissipation (TC) | 188 W | — |
| Gehäuse | PG-TDSON-8 (PQFN 5x6) Drain-Down | PG-TDSON-8-7 (SuperSO8) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 C to +175 C | — |
| Technology | Trench MOSFET (OptiMOS 5) | N-Channel MOSFET (OptiMOS 25V) |
| RoHS-Status | Compliant | Compliant |
| MSL (Moisture Sensitivity Level) | 1 | — |
| Drain-Source Voltage (VDS) | — | 25 V |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID, Ta) | — | 33 A |
| Continuous Drain Current (ID, Tc) | — | [DATA_NEEDED: Tc condition rating] |
| Pulsed Drain Current (IDM, Tc) | — | 100 A |
| On-State Resistance RDS(on) | — | 1.4 mOhm (typ) at VGS = 10 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ at VGS=10V] |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 74 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +150 °C |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |