ISC015N06NM5LF2ATMA1 vs IQE012N03LM5CGSCATMA1 Vergleich

Detaillierter Direktvergleich von ISC015N06NM5LF2ATMA1 von Infineon und IQE012N03LM5CGSCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IQE012N03LM5CGSCATMA1 IQE012N03LM5CGSCATMA1 - 30V 1.15mΩ OptiMOS 5 MOSFET | Infineon

IQE012N03LM5CGSCATMA1 - 30V 1.15mΩ OptiMOS 5 MOSFET | Infineon

IQE012N03LM5CGSCATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter ISC015N06NM5LF2ATMA1 IQE012N03LM5CGSCATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,21 $1,55
Technology OptiMOS 5 Linear FET 2 (N-Channel) OptiMOS 5 (trench MOSFET)
Drain-Source Voltage (VDS) 60 V 30 V
Continuous Drain Current (ID) at Ta 32 A —
Pulsed Drain Current (IDM) at Tc 275 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 217 W —
On-Resistance RDS(on) max at VGS=10V 1.55 mΩ —
On-Resistance RDS(on) at VGS=10V (typ) 1.3 mΩ —
Gate Threshold Voltage (VGS(th)) 3 V 2 V (typ, per Merlin listing)
Gate-Source Voltage Rating ±20 V —
Reverse Recovery Charge (Qrr) 1.3 nC —
Input Capacitance (Ciss) 6.9 nF —
Output Capacitance (Coss) 1.3 nF —
Reverse Transfer Capacitance (Crss) 55 pF —
Total Gate Charge (Qg) 90 nC —
Betriebs-Sperrschichttemperatur -55 °C to +175 °C -55 °C to +175 °C
Gehäuse PG-TDSON-8 FL (5x6 mm) PG-WHTFN-9-1 (PQFN 3.3 × 3.3 mm Source-Down dual-side cooled)
Montageart Surface Mount Surface Mount
RoHS Compliant —
FET Type — N-Channel
Continuous Drain Current (ID) @ Ta — 34 A
Continuous Drain Current (ID) @ Tc — 224 A
Maximum RDS(on) @ VGS=10V — 1.15 mΩ
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 107 W
MSL-Level — 1 (per JEDEC J-STD-020, floor life unlimited)
RoHS-Status — Compliant
Lead-Free — Yes

Datenblätter & Ressourcen

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