ISC015N06NM5LF2ATMA1 vs IQE012N03LM5CGSCATMA1 Comparison

Detailed side-by-side comparison of ISC015N06NM5LF2ATMA1 by Infineon and IQE012N03LM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQE012N03LM5CGSCATMA1 IQE012N03LM5CGSCATMA1 - 30V 1.15mΩ OptiMOS 5 MOSFET | Infineon

IQE012N03LM5CGSCATMA1 - 30V 1.15mΩ OptiMOS 5 MOSFET | Infineon

IQE012N03LM5CGSCATMA1 ✓ Active

Specification Comparison

Parameter ISC015N06NM5LF2ATMA1 IQE012N03LM5CGSCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Technology OptiMOS 5 Linear FET 2 (N-Channel) OptiMOS 5 (trench MOSFET)
Drain-Source Voltage (VDS) 60 V 30 V
Continuous Drain Current (ID) at Ta 32 A —
Pulsed Drain Current (IDM) at Tc 275 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 217 W —
On-Resistance RDS(on) max at VGS=10V 1.55 mΩ —
On-Resistance RDS(on) at VGS=10V (typ) 1.3 mΩ —
Gate Threshold Voltage (VGS(th)) 3 V 2 V (typ, per Merlin listing)
Gate-Source Voltage Rating ±20 V —
Reverse Recovery Charge (Qrr) 1.3 nC —
Input Capacitance (Ciss) 6.9 nF —
Output Capacitance (Coss) 1.3 nF —
Reverse Transfer Capacitance (Crss) 55 pF —
Total Gate Charge (Qg) 90 nC —
Operating Junction Temperature -55 °C to +175 °C -55 °C to +175 °C
Package PG-TDSON-8 FL (5x6 mm) PG-WHTFN-9-1 (PQFN 3.3 × 3.3 mm Source-Down dual-side cooled)
Mounting Type Surface Mount Surface Mount
RoHS Compliant —
FET Type — N-Channel
Continuous Drain Current (ID) @ Ta — 34 A
Continuous Drain Current (ID) @ Tc — 224 A
Maximum RDS(on) @ VGS=10V — 1.15 mΩ
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 107 W
MSL Level — 1 (per JEDEC J-STD-020, floor life unlimited)
RoHS Status — Compliant
Lead-Free — Yes

Datasheets & Resources

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