ISC015N06NM5LF2ATMA1 vs ISC060N06NM6ATMA1 Vergleich
Detaillierter Direktvergleich von ISC015N06NM5LF2ATMA1 von Infineon und ISC060N06NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon
ISC015N06NM5LF2ATMA1 ✓ AktivInfineon
ISC060N06NM6ATMA1 - 60V 62A OptiMOS 6 N-Channel MOSFET | Infineon
ISC060N06NM6ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | ISC015N06NM5LF2ATMA1 | ISC060N06NM6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,21 | $0,33 |
| Technology | OptiMOS 5 Linear FET 2 (N-Channel) | OptiMOS 6 (60V generation) |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at Ta | 32 A | 15.2 A |
| Pulsed Drain Current (IDM) at Tc | 275 A | — |
| Power Dissipation (PD) at Ta | 3 W | 3 W |
| Power Dissipation (PD) at Tc | 217 W | 50 W |
| On-Resistance RDS(on) max at VGS=10V | 1.55 mΩ | — |
| On-Resistance RDS(on) at VGS=10V (typ) | 1.3 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3 V | [DATA_NEEDED: VGS(th) typ/min/max] |
| Gate-Source Voltage Rating | ±20 V | — |
| Reverse Recovery Charge (Qrr) | 1.3 nC | — |
| Input Capacitance (Ciss) | 6.9 nF | — |
| Output Capacitance (Coss) | 1.3 nF | — |
| Reverse Transfer Capacitance (Crss) | 55 pF | — |
| Total Gate Charge (Qg) | 90 nC | [DATA_NEEDED: Qg typ/nC] |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| Gehäuse | PG-TDSON-8 FL (5x6 mm) | PG-TDSON-8 (TDSON-8) |
| Montageart | Surface Mount | Surface Mount |
| RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 6 |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 62 A |
| Configuration | — | Single N-Channel |
| Betriebstemperaturbereich | — | -55C to +175C (junction, per OptiMOS 6 family) |
| Gate Drive | — | Standard gate drive (10 V VGS recommended for full RDS(on)) |
| RoHS-Status | — | Compliant |
| MSL-Level | — | [DATA_NEEDED: MSL level] |
| On-State Resistance RDS(on) at VGS=10V | — | [DATA_NEEDED: RDS(on) max in mohm] |