ISC015N06NM5LF2ATMA1 vs ISC060N06NM6ATMA1 对比
详细并排对比 ISC015N06NM5LF2ATMA1 出自 Infineon 和 ISC060N06NM6ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon
ISC015N06NM5LF2ATMA1 ✓ 量产中规格对比
| 参数 | ISC015N06NM5LF2ATMA1 | ISC060N06NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.21 | $0.33 |
| Technology | OptiMOS 5 Linear FET 2 (N-Channel) | OptiMOS 6 (60V generation) |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at Ta | 32 A | 15.2 A |
| Pulsed Drain Current (IDM) at Tc | 275 A | — |
| Power Dissipation (PD) at Ta | 3 W | 3 W |
| Power Dissipation (PD) at Tc | 217 W | 50 W |
| On-Resistance RDS(on) max at VGS=10V | 1.55 mΩ | — |
| On-Resistance RDS(on) at VGS=10V (typ) | 1.3 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3 V | [DATA_NEEDED: VGS(th) typ/min/max] |
| Gate-Source Voltage Rating | ±20 V | — |
| Reverse Recovery Charge (Qrr) | 1.3 nC | — |
| Input Capacitance (Ciss) | 6.9 nF | — |
| Output Capacitance (Coss) | 1.3 nF | — |
| Reverse Transfer Capacitance (Crss) | 55 pF | — |
| Total Gate Charge (Qg) | 90 nC | [DATA_NEEDED: Qg typ/nC] |
| 工作结温 | -55 °C to +175 °C | — |
| 封装 | PG-TDSON-8 FL (5x6 mm) | PG-TDSON-8 (TDSON-8) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 6 |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 62 A |
| Configuration | — | Single N-Channel |
| 工作温度范围 | — | -55C to +175C (junction, per OptiMOS 6 family) |
| Gate Drive | — | Standard gate drive (10 V VGS recommended for full RDS(on)) |
| RoHS 状态 | — | Compliant |
| MSL 等级 | — | [DATA_NEEDED: MSL level] |
| On-State Resistance RDS(on) at VGS=10V | — | [DATA_NEEDED: RDS(on) max in mohm] |