ISC016N08NM8ATMA1 vs IAUC50N08S5L096ATMA1 Vergleich

Detaillierter Direktvergleich von ISC016N08NM8ATMA1 von Infineon und IAUC50N08S5L096ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
ISC016N08NM8ATMA1 ISC016N08NM8ATMA1 - 80V N-Ch OptiMOS 8 MOSFET | Infineon

ISC016N08NM8ATMA1 - 80V N-Ch OptiMOS 8 MOSFET | Infineon

ISC016N08NM8ATMA1 ✓ Aktiv
Infineon
IAUC50N08S5L096ATMA1 IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter ISC016N08NM8ATMA1 IAUC50N08S5L096ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,02 $0,98
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 8 OptiMOS 5
Channel Type N-Channel —
Drain-Source Voltage (VDS max) 80 V —
Gate-Source Voltage (VGS max) +/-20 V (typical rating) —
Continuous Drain Current (ID) at Ta 29 A —
Continuous Drain Current (ID) at Tc [DATA_NEEDED: pulsed/continuous current rating at Tc] —
Pulsed Drain Current (IDM) at Tc 268 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 263 W —
On-State Resistance RDS(on) typ @ VGS=10V 1.6 mOhm —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge Qg typ [DATA_NEEDED: total gate charge] —
Betriebstemperaturbereich -55 C to +150 C (junction) -55°C to +175°C
Gehäuse SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) PG-TDSON-8-33 (5x6 mm)
Montageart Surface Mount Surface Mount
Technology Trench-gate OptiMOS 8 (silicon) —
RoHS-Status Compliant Compliant
Lead-Free / Halogen-Free Lead-free (per Infineon product page) —
MSL-Level 1 (per JEDEC J-STD-020E classification for SuperSO8) [DATA_NEEDED: MSL level]
FET Type — N-Channel
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) — 50 A (Tc)
Pulsed Drain Current (IDM) — 200 A
On-Resistance (RDS(on)) — 9.6 mΩ max @ VGS=10V, ID=25A
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Power Dissipation (PD) — 60 W (Tc)
Automotive Qualification — AEC-Q101
Lead-Free — Yes

Datenblätter & Ressourcen

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