ISC016N08NM8ATMA1 vs IPD046N08N5ATMA1 Vergleich
Detaillierter Direktvergleich von ISC016N08NM8ATMA1 von Infineon und IPD046N08N5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC016N08NM8ATMA1 | IPD046N08N5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,02 | $0,78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 8 | OptiMOS™ 5 80V |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS max) | 80 V | — |
| Gate-Source Voltage (VGS max) | +/-20 V (typical rating) | — |
| Continuous Drain Current (ID) at Ta | 29 A | — |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: pulsed/continuous current rating at Tc] | — |
| Pulsed Drain Current (IDM) at Tc | 268 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 263 W | — |
| On-State Resistance RDS(on) typ @ VGS=10V | 1.6 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | — |
| Betriebstemperaturbereich | -55 C to +150 C (junction) | — |
| Gehäuse | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) | — |
| Montageart | Surface Mount | Surface Mount |
| Technology | Trench-gate OptiMOS 8 (silicon) | OptiMOS™ 5 trench MOSFET |
| RoHS-Status | Compliant | ROHS3 Compliant |
| Lead-Free / Halogen-Free | Lead-free (per Infineon product page) | — |
| MSL-Level | 1 (per JEDEC J-STD-020E classification for SuperSO8) | 1 (per JEDEC J-STD-020) |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 80 V |
| Continuous Drain Current (ID) at Tc=25°C | — | 90 A |
| On-Resistance RDS(on) Max at VGS=10V | — | 4.6 mΩ |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Power Dissipation (PD) at Tc=25°C | — | 125 W |
| Betriebs-Sperrschichttemperaturbereich | — | -55 °C to +175 °C |
| Gehäuse / Bauform | — | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) |
| Configuration | — | Single N-channel, 3-pin (Gate / Drain tab / Source) |