ISC024N08NM7ATMA1 vs ISC015N06NM5ATMA1 Vergleich
Detaillierter Direktvergleich von ISC024N08NM7ATMA1 von Infineon und ISC015N06NM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC024N08NM7ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,02 | $0,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (Vdss) | 80 V | — |
| Continuous Drain Current (Id) at Ta=25C | 24 A | — |
| Continuous Drain Current (Id) at Tc | 167 A | — |
| Power Dissipation (Pd) at Ta=25C | 3 W | — |
| Power Dissipation (Pd) at Tc | 150 W | — |
| Montageart | Surface Mount | Surface Mount |
| Gehäuse / Bauform | PG-TDSON-8 (SSO8) | — |
| Betriebstemperaturbereich | -55 C to +175 C | -55 C to +175 C |
| Gate Threshold Voltage (typ) | [DATA_NEEDED: gate threshold voltage] | — |
| Rds(on) at Vgs=10V (typ) | [DATA_NEEDED: Rds(on) typical value] | — |
| Total Gate Charge Qg (typ) | [DATA_NEEDED: total gate charge] | — |
| RoHS-Status | Compliant | Compliant |
| Halogenfrei | Yes | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| Technology | OptiMOS 7 trench MOSFET | Trench MOSFET (OptiMOS 5) |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| Gehäuse | — | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| MSL (Moisture Sensitivity Level) | — | 1 |