ISC025N08NM5LF2ATMA1 vs IAUC60N04S6L030HATMA1 Vergleich
Detaillierter Direktvergleich von ISC025N08NM5LF2ATMA1 von Infineon und IAUC60N04S6L030HATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon
ISC025N08NM5LF2ATMA1 ✓ AktivInfineon
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | ISC025N08NM5LF2ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,74 | $0,94 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide), OptiMOS 5 LF2 | — |
| Drain-Source Voltage (VDS) Max | 80 V | — |
| Continuous Drain Current (ID) @ TA=25°C | 23 A | — |
| Continuous Drain Current (ID) @ TC=25°C | 198 A | — |
| On-Resistance (RDS(on)) Max | 2.55 mΩ | — |
| Gate-Source Threshold (VGS(th)) Max | 3.9 V | — |
| Total Gate Charge (Qg) Max | 96 nC | — |
| Power Dissipation @ TA | 3 W | — |
| Power Dissipation @ TC | 217 W | — |
| Gehäuse | PG-TDSON-8 FL (Surface Mount) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | — |
| Polarity | N-Channel | — |
| RoHS-Status | Compliant | Compliant |
| Ordering Code Suffix | ATMA1 (Tape & Reel, 13-inch) | — |
| Manufacturer | — | Infineon Technologies |
| Part Series | — | OptiMOS 6 |
| Configuration | — | Half-Bridge (2 N-Channel) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TJ | — | 60 A |
| On-Resistance R_DS(on) at VGS=10V | — | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | — | 35 nC |
| Output Capacitance (Coss) | — | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | — | 596 pF |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Maximum Power Dissipation (PD) at TC | — | 75 W |
| Betriebs-Sperrschichttemperatur | — | -55 C to +175 C |
| Automotive Qualification | — | AEC-Q101 (per part number suffix) |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |