ISC025N08NM5LF2ATMA1 vs IAUC60N04S6L030HATMA1 Comparison
Detailed side-by-side comparison of ISC025N08NM5LF2ATMA1 by Infineon and IAUC60N04S6L030HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC025N08NM5LF2ATMA1
ISC025N08NM5LF2ATMA1 - 80V 2.55mΞ© Linear FET MOSFET | Infineon
ISC025N08NM5LF2ATMA1 β ActiveInfineon
IAUC60N04S6L030HATMA1
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 β ActiveSpecification Comparison
| Parameter | ISC025N08NM5LF2ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.74 | $0.94 |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide), OptiMOS 5 LF2 | β |
| Drain-Source Voltage (VDS) Max | 80 V | β |
| Continuous Drain Current (ID) @ TA=25Β°C | 23 A | β |
| Continuous Drain Current (ID) @ TC=25Β°C | 198 A | β |
| On-Resistance (RDS(on)) Max | 2.55 mΞ© | β |
| Gate-Source Threshold (VGS(th)) Max | 3.9 V | β |
| Total Gate Charge (Qg) Max | 96 nC | β |
| Power Dissipation @ TA | 3 W | β |
| Power Dissipation @ TC | 217 W | β |
| Package | PG-TDSON-8 FL (Surface Mount) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | β |
| Polarity | N-Channel | β |
| RoHS Status | Compliant | Compliant |
| Ordering Code Suffix | ATMA1 (Tape & Reel, 13-inch) | β |
| Manufacturer | β | Infineon Technologies |
| Part Series | β | OptiMOS 6 |
| Configuration | β | Half-Bridge (2 N-Channel) |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TJ | β | 60 A |
| On-Resistance R_DS(on) at VGS=10V | β | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | β | 35 nC |
| Output Capacitance (Coss) | β | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | β | 596 pF |
| Gate Threshold Voltage (VGS(th)) | β | 2 V |
| Maximum Power Dissipation (PD) at TC | β | 75 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Automotive Qualification | β | AEC-Q101 (per part number suffix) |
| MSL Level | β | 1 (per JEDEC J-STD-020) |