ISC033N03LF2SATMA1 vs ISC028N03LF2SATMA1 Vergleich
Detaillierter Direktvergleich von ISC033N03LF2SATMA1 von Infineon und ISC028N03LF2SATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC033N03LF2SATMA1 | ISC028N03LF2SATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,81 | $0,86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| MPN | ISC033N03LF2SATMA1 | — |
| Part Family | OptiMOS LF2 (<= 40V) | — |
| Transistortyp | N-Channel MOSFET | — |
| Technology | OptiMOS trench (<= 40V) | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TC | 108 A | — |
| Continuous Drain Current (ID) at TA | 22 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum On-Resistance RDS(on) max | 3.3 mOhm at VGS = 10 V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage rating] | — |
| Gate Threshold Voltage VGS(th) typ | 2.35 V | 2.35 V |
| Power Dissipation (PD) at TA | 3 W | — |
| Power Dissipation (PD) at TC | 71 W | — |
| Gehäuse | PG-TDSON-8-62 (Source-Down, 5x6 mm) | PG-TDSON-8-62 (5x6 mm) with exposed pad |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | — |
| Junction Temperature (TJ) max | [DATA_NEEDED: junction temperature max] | — |
| Configuration | Single N-channel, source-down | — |
| RoHS-Status | Compliant | — |
| MSL-Level | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Product Family | — | OptiMOS 5 30V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 24 A |
| Continuous Drain Current (ID) at TC=25C | — | 128 A |
| On-Resistance RDS(on) max at VGS=10V | — | 2.8 mOhm |
| Power Dissipation at TA | — | 3 W |
| Power Dissipation at TC | — | 83 W |
| Betriebs-Sperrschichttemperatur | — | -55 C to +175 C |
| RoHS / Lead-Free | — | Yes (RoHS compliant) |