ISC033N03LF2SATMA1 vs ISC151N08NM6ATMA1 Vergleich

Detaillierter Direktvergleich von ISC033N03LF2SATMA1 von Infineon und ISC151N08NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
ISC033N03LF2SATMA1 ISC033N03LF2SATMA1 - 30V 108A N-Channel MOSFET | Infineon

ISC033N03LF2SATMA1 - 30V 108A N-Channel MOSFET | Infineon

ISC033N03LF2SATMA1 ✓ Aktiv
Infineon
ISC151N08NM6ATMA1 ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter ISC033N03LF2SATMA1 ISC151N08NM6ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,81 $0,78
Manufacturer Infineon Technologies —
MPN ISC033N03LF2SATMA1 —
Part Family OptiMOS LF2 (<= 40V) —
Transistortyp N-Channel MOSFET N-Channel MOSFET
Technology OptiMOS trench (<= 40V) OptiMOS 6
Drain-Source Voltage (VDS) 30 V 80 V
Continuous Drain Current (ID) at TC 108 A —
Continuous Drain Current (ID) at TA 22 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Maximum On-Resistance RDS(on) max 3.3 mOhm at VGS = 10 V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage rating] —
Gate Threshold Voltage VGS(th) typ 2.35 V 3.5 V
Power Dissipation (PD) at TA 3 W —
Power Dissipation (PD) at TC 71 W —
Gehäuse PG-TDSON-8-62 (Source-Down, 5x6 mm) PG-TDSON-8 FL
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich [DATA_NEEDED: operating temperature range] —
Junction Temperature (TJ) max [DATA_NEEDED: junction temperature max] —
Configuration Single N-channel, source-down —
RoHS-Status Compliant Compliant
MSL-Level [DATA_NEEDED: MSL level] —
Continuous Drain Current (TA=25°C) — 9.2 A
Kontinuierlicher Drain-Strom (TC=25°C) — 37 A
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 48 W
On-Resistance RDS(on) max — 15.1 mΩ
Anzahl der Pins — 8
Channel Mode — Enhancement
Betriebstemperatur — -55 °C to +175 °C

Datenblätter & Ressourcen

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