ISC037N12NM6ATMA1 vs IPTG025N15NM6ATMA1 Vergleich

Detaillierter Direktvergleich von ISC037N12NM6ATMA1 von Infineon und IPTG025N15NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter ISC037N12NM6ATMA1 IPTG025N15NM6ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $3,62 $1,52
Technology OptiMOS 6 (N-channel trench MOSFET) OptiMOS 6 150 V (N-channel trench)
Drain-Source Voltage (Vds) 120 V —
Continuous Drain Current (Id) at Ta=25C 19.2 A —
Pulsed Drain Current (Idm) at Tc 163 A —
On-Resistance Rds(on) typ at Vgs=10V 3.7 mOhm —
Power Dissipation at Ta 3 W —
Power Dissipation at Tc 214 W —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) value] —
Gate Charge (Qg) typ [DATA_NEEDED: Qg total] —
Gehäuse PG-TDSON-8 FL (SuperSO8) PG-HSOG-8-1 (TOLG)
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -55C to +175C (junction) -55 C to +175 C (typical for OptiMOS 6)
RoHS-Status Compliant Compliant
Avalanche Energy Rated Yes (single-pulse) —
MSL-Level 1 (per JEDEC J-STD-020) —
Manufacturer — Infineon Technologies
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID) at TA=25C — 26 A
Continuous Drain Current (ID) at TC=25C — 264 A (pulsed)
Power Dissipation (PD) at TA=25C — 3.8 W
Power Dissipation (PD) at TC=25C — 395 W
On-State Resistance RDS(on) typ — 2.5 mOhm at VGS=10 V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) value]
Total Gate Charge Qg typ — [DATA_NEEDED: Qg value]
MSL (Moisture Sensitivity Level) — MSL1 (per JEDEC J-STD-020)
Solder Joint Reliability — Excellent - 30% smaller footprint than D2PAK

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern