ISC037N12NM6ATMA1 vs IQD005N04NM6ATMA1 Vergleich
Detaillierter Direktvergleich von ISC037N12NM6ATMA1 von Infineon und IQD005N04NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC037N12NM6ATMA1 | IQD005N04NM6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,62 | $0,82 |
| Technology | OptiMOS 6 (N-channel trench MOSFET) | OptiMOS 6 trench MOSFET |
| Drain-Source Voltage (Vds) | 120 V | — |
| Continuous Drain Current (Id) at Ta=25C | 19.2 A | — |
| Pulsed Drain Current (Idm) at Tc | 163 A | — |
| On-Resistance Rds(on) typ at Vgs=10V | 3.7 mOhm | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 214 W | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg total] | — |
| Gehäuse | PG-TDSON-8 FL (SuperSO8) | PG-TSON-8-9 (PQFN 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +175C (junction) | -55C to +150C |
| RoHS-Status | Compliant | Compliant |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 6 Power-Transistor |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Ta=25C | — | 58 A |
| Pulsed Drain Current (IDM) at Tc | — | 610 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 0.5 mOhm |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 333 W |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |