ISC058N04NM5ATMA1 vs ISC015N04NM5ATMA1 Vergleich
Detaillierter Direktvergleich von ISC058N04NM5ATMA1 von Infineon und ISC015N04NM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
ISC058N04NM5ATMA1 - 40V 63A 5.8mOhm OptiMOS 5 N-MOSFET | Infineon
ISC058N04NM5ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | ISC058N04NM5ATMA1 | ISC015N04NM5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,60 | $0,98 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 40V Normal Level | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tc=25C) | 63 A | — |
| Continuous Drain Current (ID, Ta=25C) | 17 A | — |
| On-Resistance Rds(on) max @ VGS=10V, ID=31A | 5.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 3.4 V | — |
| Power Dissipation (TA=25C) | 3 W | — |
| Power Dissipation (TC=25C) | 42 W | — |
| Gehäuse | PG-TDSON-8 FL (SuperSO8 5x6 mm) | — |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 5 (trench MOSFET) |
| Betriebstemperaturbereich | -55C to +175C | -55 C to +175 C (junction, per OptiMOS 5) |
| RoHS Compliance | RoHS Compliant | — |
| MSL (Moisture Sensitivity Level) | MSL per JEDEC J-STD-020 | — |
| Gate Drive Level | Normal Level (10V VGS recommended) | — |
| Series | — | OptiMOS 5 40V Normal Level |
| FET Type | — | N-Channel |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | 3.4 V (typ) |
| R_DS(on) max | — | 1.5 mOhm @ VGS=10 V, ID=50 A |
| Continuous Drain Current (ID) at Ta=25C | — | 33 A |
| Continuous Drain Current (ID) at Tc=25C | — | 206 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 115 W |
| Gehäuse / Bauform | — | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Pin-Anzahl | — | 8 |
| RoHS-Status | — | Compliant |
| MSL-Level | — | 1 (per Infineon SuperSO8 family) |
| Drive Level | — | Normal Level (VGS(th) ~3.4 V) |