ISC060N06NM6ATMA1 vs ISC015N06NM5ATMA1 Vergleich

Detaillierter Direktvergleich von ISC060N06NM6ATMA1 von Infineon und ISC015N06NM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter ISC060N06NM6ATMA1 ISC015N06NM5ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,33 $0,62
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 6 —
Transistortyp N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Ta 15.2 A —
Continuous Drain Current (ID) at Tc 62 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 50 W —
Gehäuse PG-TDSON-8 (TDSON-8) PG-TDSON-8 (PQFN 5x6) Drain-Down
Montageart Surface Mount Surface Mount
Technology OptiMOS 6 (60V generation) Trench MOSFET (OptiMOS 5)
Configuration Single N-Channel —
Betriebstemperaturbereich -55C to +175C (junction, per OptiMOS 6 family) -55 C to +175 C
Gate Drive Standard gate drive (10 V VGS recommended for full RDS(on)) —
RoHS-Status Compliant Compliant
MSL-Level [DATA_NEEDED: MSL level] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
On-State Resistance RDS(on) at VGS=10V [DATA_NEEDED: RDS(on) max in mohm] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ/nC] —
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TA=25C — 33 A
Pulsed Drain Current (IDM) at TC=25C — 259 A
On-Resistance RDS(on) typical at VGS=10V — 1.5 mOhm
Total Power Dissipation (TA) — 3 W
Total Power Dissipation (TC) — 188 W
MSL (Moisture Sensitivity Level) — 1

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern