ISC060N06NM6ATMA1 vs ISC015N06NM5ATMA1 Comparaison
Comparaison détaillée côte à côte de ISC060N06NM6ATMA1 par Infineon et ISC015N06NM5ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
ISC060N06NM6ATMA1 - 60V 62A OptiMOS 6 N-Channel MOSFET | Infineon
ISC060N06NM6ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | ISC060N06NM6ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,33 | $0,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 | — |
| Type de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Ta | 15.2 A | — |
| Continuous Drain Current (ID) at Tc | 62 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 50 W | — |
| Boîtier | PG-TDSON-8 (TDSON-8) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Type de montage | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 (60V generation) | Trench MOSFET (OptiMOS 5) |
| Configuration | Single N-Channel | — |
| Plage de température de fonctionnement | -55C to +175C (junction, per OptiMOS 6 family) | -55 C to +175 C |
| Gate Drive | Standard gate drive (10 V VGS recommended for full RDS(on)) | — |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | [DATA_NEEDED: MSL level] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| On-State Resistance RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max in mohm] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ/nC] | — |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| MSL (Moisture Sensitivity Level) | — | 1 |