ISC060N10NM6ATMA1 vs ISC011N03L5SATMA1 Vergleich
Detaillierter Direktvergleich von ISC060N10NM6ATMA1 von Infineon und ISC011N03L5SATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
ISC060N10NM6ATMA1 - 100V 97A OptiMOS 6 N-Channel MOSFET | Infineon
ISC060N10NM6ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | ISC060N10NM6ATMA1 | ISC011N03L5SATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,43 | $0,47 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 100 V | OptiMOS 5 / StrongIRFET 30 V |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 30 V |
| Continuous Drain Current (ID) at Ta | 15 A | — |
| Continuous Drain Current (ID) at Tc | 97 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Drain-Source On-Resistance (RDS(on)) | 6 mΩ at VGS = 10 V, ID = 25 A | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.3 V (typical) | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 125 W | — |
| Betriebstemperaturbereich | -55 °C to +175 °C (TJ) | — |
| Gehäuse | PG-TDSON-8 FL (5.15 x 6.15 mm) | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 (thin-wafer trench) | OptiMOS 5 trench MOSFET |
| Polarity | N-Channel | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Continuous Drain Current (ID) @ Ta=25C | — | 37 A |
| Continuous Drain Current (ID) @ Tc=25C | — | 100 A |
| Power Dissipation (PD) @ Ta=25C | — | 2.5 W |
| Power Dissipation (PD) @ Tc=25C | — | 96 W |
| Betriebstemperatur | — | -55 C to +175 C (TJ) |
| Gate Drive | — | Logic-level compatible |