ISC060N10NM6ATMA1 vs ISC080N10NM6ATMA1 Vergleich
Detaillierter Direktvergleich von ISC060N10NM6ATMA1 von Infineon und ISC080N10NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
ISC060N10NM6ATMA1 - 100V 97A OptiMOS 6 N-Channel MOSFET | Infineon
ISC060N10NM6ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | ISC060N10NM6ATMA1 | ISC080N10NM6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,43 | $1,05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 100 V | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Ta | 15 A | 13 A |
| Continuous Drain Current (ID) at Tc | 97 A | 75 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Drain-Source On-Resistance (RDS(on)) | 6 mΩ at VGS = 10 V, ID = 25 A | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.3 V (typical) | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at Ta | 3 W | 3 W |
| Power Dissipation (PD) at Tc | 125 W | 100 W |
| Betriebstemperaturbereich | -55 °C to +175 °C (TJ) | -55°C to +175°C (TJ max, per datasheet) |
| Gehäuse | PG-TDSON-8 FL (5.15 x 6.15 mm) | PG-TDSON-8 FL (TDSON EP) |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 (thin-wafer trench) | — |
| Polarity | N-Channel | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, per datasheet) |
| Product Family | — | OptiMOS™ 6 100V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 100 V |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | — | 8.05 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 3.3 V at 36 µA |
| Lead-Free | — | Yes |
| Halogenfrei | — | Yes |
| Qualification | — | Industrial grade (per Infineon OptiMOS 6 100V family) |