ISC060N10NM6ATMA1 vs ISC080N10NM6ATMA1 Comparison

Detailed side-by-side comparison of ISC060N10NM6ATMA1 by Infineon and ISC080N10NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter ISC060N10NM6ATMA1 ISC080N10NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 6 100 V —
Transistor Type N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Ta 15 A 13 A
Continuous Drain Current (ID) at Tc 97 A 75 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Drain-Source On-Resistance (RDS(on)) 6 mΩ at VGS = 10 V, ID = 25 A —
Gate-Source Threshold Voltage (VGS(th)) 3.3 V (typical) —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at Ta 3 W 3 W
Power Dissipation (PD) at Tc 125 W 100 W
Operating Temperature Range -55 °C to +175 °C (TJ) -55°C to +175°C (TJ max, per datasheet)
Package PG-TDSON-8 FL (5.15 x 6.15 mm) PG-TDSON-8 FL (TDSON EP)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 6 (thin-wafer trench) —
Polarity N-Channel —
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020, per datasheet)
Product Family — OptiMOS™ 6 100V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 100 V
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A — 8.05 mΩ
Gate Threshold Voltage (VGS(th)) — 3.3 V at 36 µA
Lead-Free — Yes
Halogen Free — Yes
Qualification — Industrial grade (per Infineon OptiMOS 6 100V family)

Datasheets & Resources

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