ISC060N10NM6ATMA1 vs ISC110N12NM6ATMA1 Vergleich
Detaillierter Direktvergleich von ISC060N10NM6ATMA1 von Infineon und ISC110N12NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
ISC060N10NM6ATMA1 - 100V 97A OptiMOS 6 N-Channel MOSFET | Infineon
ISC060N10NM6ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | ISC060N10NM6ATMA1 | ISC110N12NM6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,43 | $0,51 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 6 100 V | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 120 V |
| Continuous Drain Current (ID) at Ta | 15 A | 11 A |
| Continuous Drain Current (ID) at Tc | 97 A | 62 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Drain-Source On-Resistance (RDS(on)) | 6 mΩ at VGS = 10 V, ID = 25 A | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.3 V (typical) | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 125 W | — |
| Betriebstemperaturbereich | -55 °C to +175 °C (TJ) | — |
| Gehäuse | PG-TDSON-8 FL (5.15 x 6.15 mm) | SuperSO8 (TDSON-8) |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 (thin-wafer trench) | — |
| Polarity | N-Channel | N-Channel |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| On-Resistance RDS(on) max at VGS=10V | — | 9.8 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | 3.1 V |
| Total Gate Charge (Qg) | — | 15.4 nC |
| Input Capacitance (Ciss) | — | 1.1 nF |
| Output Capacitance (Coss) | — | 330 pF |
| Reverse Transfer Capacitance (Crss) | — | 10 pF |
| Power Dissipation (Pd) at Tc | — | 94 W |
| Power Dissipation (Pd) at Ta | — | 3 W |
| Avalanche Energy (EAS) | — | 185 mJ |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |