ISC0802NLSATMA1 vs IAUC60N04S6N044ATMA1 Vergleich

Detaillierter Direktvergleich von ISC0802NLSATMA1 von Infineon und IAUC60N04S6N044ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter ISC0802NLSATMA1 IAUC60N04S6N044ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,80 $0,98
Manufacturer Infineon Technologies —
Series OptiMOS 5 —
Part Number ISC0802NLSATMA1 —
FET Type N-Channel —
Technology OptiMOS 5 (Power MOSFET) OptiMOS-6 N-channel trench MOSFET
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc 150 A —
Continuous Drain Current (ID) at Ta 22 A —
RDS(on) max at VGS=10V 3.6 mOhm —
Power Dissipation (Pd) at Ta 2.5 W —
Power Dissipation (Pd) at Tc 125 W —
Betriebstemperaturbereich -55 C to +175 C —
Gehäuse PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TDSON-8 (5x6 mm) with exposed pad
Montageart Surface Mount Surface Mount
RoHS-Status Compliant Compliant
Drain-Source Voltage (V_DS) — 40 V
Gate-Source Voltage (V_GS) — [DATA_NEEDED: max V_GS rating]
Continuous Drain Current (I_D) at Tc=25°C — 60 A
Continuous Drain Current (I_D) at Tc=100°C — [DATA_NEEDED: pulsed/current derated value]
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
On-Resistance R_DS(on) max @ V_GS=10V — 4.4 mΩ
On-Resistance R_DS(on) max @ V_GS=4.5V — [DATA_NEEDED: R_DS(on) at V_GS=4.5V]
Total Gate Charge (Q_g) — [DATA_NEEDED: typical gate charge]
Power Dissipation (P_D) at Tc=25°C — 42 W
Betriebs-Sperrschichttemperatur — -55°C to +175°C
MSL-Level — 1 (unlimited)
Automotive Qualification — AEC-Q101 qualified (IAUC prefix)
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen-free status]

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