ISC0802NLSATMA1 vs ISC046N13NM6ATMA1 Vergleich
Detaillierter Direktvergleich von ISC0802NLSATMA1 von Infineon und ISC046N13NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC0802NLSATMA1 | ISC046N13NM6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,80 | $1,08 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Part Number | ISC0802NLSATMA1 | — |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (Power MOSFET) | OptiMOS 6 trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 135 V |
| Continuous Drain Current (ID) at Tc | 150 A | — |
| Continuous Drain Current (ID) at Ta | 22 A | — |
| RDS(on) max at VGS=10V | 3.6 mOhm | — |
| Power Dissipation (Pd) at Ta | 2.5 W | — |
| Power Dissipation (Pd) at Tc | 125 W | — |
| Betriebstemperaturbereich | -55 C to +175 C | -55 C to +175 C |
| Gehäuse | PG-TDSON-8-7 (SuperSO8 5x6 mm) | — |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Part Family | — | OptiMOS 6 |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA | — | 17 A |
| Continuous Drain Current (ID) at TC | — | 142 A |
| Power Dissipation (PD) at TA | — | 3 W |
| Power Dissipation (PD) at TC | — | 211 W |
| Gehäuse / Bauform | — | PG-TDSON-8 |
| Gate Drive (recommended) | — | 10 V (typical) |
| Packaging | — | Tape & Reel |