ISC088N08NM6ATMA1 vs ISC037N12NM6ATMA1 Vergleich

Detaillierter Direktvergleich von ISC088N08NM6ATMA1 von Infineon und ISC037N12NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter ISC088N08NM6ATMA1 ISC037N12NM6ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,78 $3,62
Manufacturer Infineon Technologies —
Product Family OptiMOS 6 —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at Ta=25 C 12.1 A —
Continuous Drain Current (ID) at Tc=25 C 59 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 3.5 V —
On-Resistance RDS(on) max at VGS=10 V 8.8 mOhm —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Power Dissipation (PD) at Ta=25 C 3 W —
Power Dissipation (PD) at Tc=25 C 71 W —
Betriebs-Sperrschichttemperatur -55 C to +175 C —
Gehäuse PG-TDSON-8 FL PG-TDSON-8 FL (SuperSO8)
Montageart Surface Mount Surface Mount
MSL-Level [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020)
RoHS-Status Compliant (per distributor listings) Compliant
Technology Trench-gate OptiMOS 6 OptiMOS 6 (N-channel trench MOSFET)
Drain-Source Voltage (Vds) — 120 V
Continuous Drain Current (Id) at Ta=25C — 19.2 A
Pulsed Drain Current (Idm) at Tc — 163 A
On-Resistance Rds(on) typ at Vgs=10V — 3.7 mOhm
Power Dissipation at Ta — 3 W
Power Dissipation at Tc — 214 W
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) value]
Gate Charge (Qg) typ — [DATA_NEEDED: Qg total]
Betriebstemperaturbereich — -55C to +175C (junction)
Avalanche Energy Rated — Yes (single-pulse)

Datenblätter & Ressourcen

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