ISC088N08NM6ATMA1 vs ISC037N12NM6ATMA1 Comparison
Detailed side-by-side comparison of ISC088N08NM6ATMA1 by Infineon and ISC037N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC088N08NM6ATMA1
ISC088N08NM6ATMA1 - 80V 8.8mOhm N-Channel MOSFET | Infineon
ISC088N08NM6ATMA1 β ActiveInfineon
ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon
ISC037N12NM6ATMA1 β ActiveSpecification Comparison
| Parameter | ISC088N08NM6ATMA1 | ISC037N12NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $3.62 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 6 | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) at Ta=25 C | 12.1 A | β |
| Continuous Drain Current (ID) at Tc=25 C | 59 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | β |
| On-Resistance RDS(on) max at VGS=10 V | 8.8 mOhm | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | β |
| Power Dissipation (PD) at Ta=25 C | 3 W | β |
| Power Dissipation (PD) at Tc=25 C | 71 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | PG-TDSON-8 FL | PG-TDSON-8 FL (SuperSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant (per distributor listings) | Compliant |
| Technology | Trench-gate OptiMOS 6 | OptiMOS 6 (N-channel trench MOSFET) |
| Drain-Source Voltage (Vds) | β | 120 V |
| Continuous Drain Current (Id) at Ta=25C | β | 19.2 A |
| Pulsed Drain Current (Idm) at Tc | β | 163 A |
| On-Resistance Rds(on) typ at Vgs=10V | β | 3.7 mOhm |
| Power Dissipation at Ta | β | 3 W |
| Power Dissipation at Tc | β | 214 W |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) typ | β | [DATA_NEEDED: Qg total] |
| Operating Temperature Range | β | -55C to +175C (junction) |
| Avalanche Energy Rated | β | Yes (single-pulse) |