ISC240P06LMATMA1 vs IPB110P06LMATMA1 Vergleich
Detaillierter Direktvergleich von ISC240P06LMATMA1 von Infineon und IPB110P06LMATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC240P06LMATMA1 | IPB110P06LMATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,99 | $1,31 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -60 V | -60 V |
| Continuous Drain Current (ID, Tc) | -59 A | — |
| On-Resistance RDS(on) max @ VGS=-10V | 24 mΩ | — |
| Power Dissipation (Ta) | 188 W | — |
| Technology | OptiMOS trench | OptiMOS (trench MOSFET) |
| Gehäuse | PG-TDSON-8 FL (SuperSO8 5x6) | — |
| Montageart | Surface Mount | Surface Mount |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg typical value] | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| Avalanche Rated | Yes (single-pulse) | — |
| Lead-Free / RoHS | Yes (per Infineon product page) | — |
| REACH Compliance | Compliant | — |
| FET Type | — | P-Channel |
| Continuous Drain Current (ID) at TC=25C | — | -100 A |
| Maximum Power Dissipation (PD) at TC=25C | — | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | — | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | — | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | — | +/-20 V |
| Betriebstemperaturbereich | — | -55 C to +175 C (TJ) |
| Gehäuse / Bauform | — | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| Supplier Device Package | — | PG-TO263-3-2 |
| Gate Drive Level | — | Logic-level compatible |
| RoHS-Status | — | Compliant |
| Lead-Free | — | Yes |