ISC300N20NM6ATMA1 vs ISC045N03L5SATMA1 Vergleich
Detaillierter Direktvergleich von ISC300N20NM6ATMA1 von Infineon und ISC045N03L5SATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
ISC300N20NM6ATMA1 - 200V 44A OptiMOS 6 N-Channel MOSFET | Infineon
ISC300N20NM6ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | ISC300N20NM6ATMA1 | ISC045N03L5SATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,15 | $0,51 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 200V | — |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V | 30 V |
| Continuous Drain Current (ID) at TC | 44 A | — |
| Continuous Drain Current (ID) at Ta | 6.5 A | — |
| Power Dissipation (PD) at TC | 136 W | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Drain-Source On-Resistance (RDS(on)) | 27 mΩ (typical) | — |
| Gate Threshold Voltage (VGS(th)) | 4.5 V | — |
| Gehäuse | PG-TDSON-8 | SuperSO8 5x6 (PG-TDSON-8-6) |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 | OptiMOS 5 / Trench |
| Operating Mode | Enhancement | — |
| RoHS-Status | Compliant | Compliant |
| Part Number | — | ISC045N03L5SATMA1 |
| Continuous Drain Current (ID) at TA=25°C | — | 18 A |
| Continuous Drain Current (ID) at TC=25°C | — | 63 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.5 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 2 V @ ID=250 µA |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Total Gate Charge (Qg) | — | 13 nC @ VGS=10 V |
| Input Capacitance (Ciss) | — | 870 pF @ VDS=15 V |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Power Dissipation (PD) at TC=25°C | — | 30 W |
| Betriebstemperaturbereich | — | -55 °C to +150 °C |